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ISL9R860PF2 — STEALTH? Diode
Package Marking and Ordering Information
Electrical Characteristics TC
= 25
°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max
Unit
IR
Instantaneous Reverse Current
VR
= 600
V
TC
= 25
°C - - 100
μA
TC
= 125
°C--1.0mA
VF
Instantaneous Forward Voltage
IF = 8
A
TC
= 25
°C-2.02.4V
TC
= 125
°C-1.62.0V
CJ
Junction Capacitance
VR = 10
V
,
I
F
= 0
A
- 30 - pF
trr
Reverse Recovery Time
IF
= 1
A,
d
iF/dt
=
100
A/μR
= 30
V
- 18 25 ns
s,
V
IF
= 8
A,
d
iF/dt
=
100
A/μR
= 30
V
- 21 30 ns
s,
V
trr
Reverse Recovery Time
IF
= 8
A,
-28-ns
diF/dt
= 200
A/μ- 3.2 - A
s,
VR
= 390
V,
T
C
= 25°C
- 50 - nC
Irr
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
IF
= 8
A,
-77-ns
)-diF/dt
= 200
A/μ3.7-s,
Maximum Reverse Recovery Current
VR
= 390
V,
- 3.4 - A
TC
= 125°C
S Softness Factor (tb/ta
Irr
Qrr
Reverse Recovery Charge
- 150 - nC
trr
Reverse Recovery Time
IF
= 8
A,
-53-ns
)-diF/dt
= 600
A/μ2.5-s,
Maximum Reverse Recovery Current
VR
= 390
V,
- 6.5 - A
TC
= 125°C
S Softness Factor (tb/ta
Irr
Qrr
Reverse Recovery Charge
195 - nC
dIM/dt Maximum di/dt during tb
- 500 - A/μs
RθJC
Thermal Resistance Junction to Case
- - 4.8
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220F
- - 70
°C/W
?2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. C1
www.fairchildsemi.com
2
Part Number Top Mark
Package
Packing Method Reel Size Tape Width Quantity
ISL9R860PF2
ISL9R860PF2
TO-220F-2L
Tube
N/A
N/A
50
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